Double blanket ion implant method and structure

ABSTRACT

A double blanket ion implant method for forming diffulsion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffulsion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices. In addition, the first and second energy levels and doses are substantially lower than an energy level and dose used in a prior art single implantation process.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the field of semiconductor memory devices and, more particularly to a structure having improved static refresh properties in dynamic random access memory devices and a method of making it.

2. Description of the Related Art

Metal oxide semiconductor (MOS) structures are basic electronic devices used in many integrated circuits. One such structure is the metal oxide semiconductor field effect transistor (MOSFET), which is typically formed in a semiconductor substrate by providing a gate structure over the substrate to define a channel region, and by forming source and drain regions on opposing sides of the channel region.

To keep pace with the current trend toward maximizing the number of circuit devices contained in a single chip, integrated circuit designers continue to design integrated circuit devices with smaller and smaller feature sizes. For example, not too long ago it was not uncommon to have MOSFET devices (including CMOS devices) having channel lengths of 2 microns or more. The current state of the art for production MOSFET devices includes channel lengths of less than a ¼ micron.

As the channel lengths of MOSFET devices have been reduced, MOSFETS have become more susceptible to certain problems. One common problem is increased junction leakage, a condition affecting the refresh characteristics of a dynamic random access memory (DRAM) memory cell. DRAM is a specific category of random access memory (RAM) containing an array of individual memory cells, where each cell includes a capacitor for holding a charge and a transistor for accessing the charge held in the capacitor. Due to junction leakage, the stored charge must be re-stored in the capacitor on a periodic basis through a process known as refresh. Increased junction leakage leads to a premature depletion of the capacitor's stored charge, necessitating more frequent refresh cycles. Because resources are expended in refreshing the DRAM cells, the longer the period between refresh cycles, the better. The term “pause” is often used to represent the amount of time that a DRAM cell, or group of cells, can maintain their charge without undergoing a refresh operation. That is, how long can the DRAM control circuitry pause between refresh operations and still maintain the stored state of the DRAM memory cell. It is desirable to extend the pause period of, and improve the static refresh of, the DRAM.

A manufacturer may want to improve static refresh performance of the DRAM to provide customers with the capability to perform more memory operations (e.g., reads and writes) between refresh cycles. This reduces the overhead required to utilize the DRAM. Moreover, a manufacturer may want to improve static refresh performance to improve the operating specifications of the DRAM. For example, DRAMs typically have a low-power or standby specification requiring the DRAM to operate within a maximum current during a low-power mode. Since memory cells must be refreshed during the lower-power mode, reducing the frequency of the refresh operations will improve the DRAM's operational performance for the low-power mode.

FIG. 1 illustrates a prior art MOSFET memory array device 5. The device 5 and its fabrication method are described in U.S. Pat. No. 5,534,449 (Dennison et al.), which is hereby incorporated by reference in its entirety. Briefly, the fabrication of the device 5 is initiated by forming a gate structure 10 on a substrate 8. The substrate 8 is typically a bulk silicon substrate, which may have a doped well therein in which transistors are formed. The gate structure 10 (referred to in the '449 patent as a gate line) typically comprises a gate oxide 12, a conductive polysilicon layer 14, an overlying WSi_(x) layer 16, an overlying novellus oxide layer 18 and a Si₃N₄ capping layer 20. The cross sectional width of this prior art gate structure 10 is 0.40 microns.

Once the gate structure 10 is formed, the device 5 is subjected to oxidizing conditions. This process step is often referred to as a “re-ox” step or a thermal re-ox step. Oxidized sidewalls 22, 24 are formed on the gate structure 10, and oxide regions 26, 28 are formed on the substrate, as a result of the re-ox step. Subsequent to the re-ox step, a blanket phosphorous implant step is performed to form diffusion regions 30, 32. This blanket phosphorous implant is performed at an energy level ranging from 30 Kev to 60 Kev with a dose ranging from 7×10² ions/cm² to 1.5×10¹³ ions/cm² to provide an average dopant concentration for the diffusion regions 30, 32 ranging from 1×10¹⁷ ions/cm³ to 1×10¹⁹ ions/cm³. For the prior art device 5, this blanket phosphorous implant step is performed after the re-ox step to prevent the phosphorous from diffusing too far underneath the gate structure 10, which could cause transistor leakage problems.

The fabrication process of the device 5 typically includes the formation of oxide or nitride sidewall spacers 40, 42 on the sidewalls of the gate structure 10. Further processing may be performed as described in the '449 patent. Although the MOSFET memory array device 5 is a vast improvement over earlier memory array devices, it can still benefit from improved static refresh performance. Thus, it is still desirable to improve as much as possible the static refresh performance of the memory device.

SUMMARY OF THE INVENTION

The present invention provides a memory array device having improved static refresh over prior art memory array devices.

The above and other features and advantages of the invention are achieved by a double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device. The method provides a semiconductor substrate with a gate structure formed on its surface. Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices. In addition, the first and second energy levels and doses are substantially lower than an energy level and dose used in a prior art single implantation process.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages and features of the invention will become more apparent from the detailed description of the preferred embodiments of the invention given below with reference to the accompanying drawings in which:

FIG. 1 is a fragmentary vertical cross-sectional view of a prior art memory array device conventional diffusion regions;

FIG. 2 is a fragmentary vertical cross sectional view of an integrated circuit memory array device formed in accordance with the present invention;

FIG. 3 is a fragmentary vertical cross sectional view of the device illustrated in FIG. 2 at an early stage of formation;

FIG. 4 is a fragmentary vertical cross sectional view of the device illustrated in FIG. 3 at a later stage of formation;

FIG. 5 is a fragmentary vertical cross sectional view of the device illustrated in FIG. 4 at a later stage of formation;

FIG. 6 is a fragmentary vertical cross sectional view of the device illustrated in FIG. 5 at a later stage of formation;

FIG. 7 is a fragmentary vertical cross sectional view of the device illustrated in FIG. 6 at a later stage of formation;

FIG. 8 is a graph illustrating the dopant concentration of diffusion regions within the devices illustrated in FIGS. 1 and 2;

FIGS. 9 and 10 are graphs illustrating the static refresh performance of the devices illustrated in FIGS. 1 and 2; and

FIG. 11 is block diagram of a processor-based system including a memory device formed in accordance with the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention will be described as set forth in the preferred embodiments illustrated in FIGS. 2-7 and 11. Other embodiments may be utilized and structural or logical changes may be made without departing from the spirit or scope of the present invention. Like items are referred to by like reference numerals.

FIG. 2 illustrates a portion of an integrated circuit MOSFET memory array device 105 constructed in accordance with the present invention. The device 105 is preferably used as an access device of a DRAM memory cell. As will be described with reference to FIGS. 3 to 7, the device 105 including diffusion regions 130, 132 is fabricated using two blanket phosphorous ion implant steps sandwiched around a conventional re-ox step. Since two implant steps are performed, diffusion region 130 comprises two regions 130 a, 130 b having different dopant concentrations. Similarly, diffusion region 132 comprises two regions 132 a, 132 b having different dopant concentrations. As described with reference to FIGS. 9 and 10, the uniquely formed diffusion regions 130, 132 provide the device 105 with improved static refresh performance over the prior device 5 (illustrated in FIG. 1). Since the method uses two separate blanket phosphorous ion implant steps, it will be referred to hereinafter as a “double blanket ion implant method.”

Hereinafter, the terms “wafer” and “substrate” are used interchangeably and are to be understood as including silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technology, doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures. Furthermore, when reference is made to a “wafer” or “substrate” in the following description, previous process steps may have been utilized to form regions or junctions in the base semiconductor structure or foundation.

In addition, no particular order is required for the method steps described below, with the exception of those logically requiring the results of prior steps, for example formation of spacers 40, 42 adjacent to the sidewalls of the gate structure 10 logically requires the prior formation of the gate structure 10 and its sidewalls. Otherwise, enumerated steps are provided below in an exemplary order which may be altered, for instance the several ion implant steps may be rearranged using masking and etching steps as is known in the art.

FIG. 3 shows the integrated circuit MOSFET memory array device 105 in accordance with the present invention at an early stage of formation. A gate structure 110 is provided on the substrate 8 as is known in the art and described in the '449 patent to Dennison et al. The substrate 8 is typically a bulk silicon substrate, which may have a doped well in which access transistors are to be formed. The gate structure 110 comprises a gate oxide 12, a conductive polysilicon layer 14, an overlying WSi_(x) layer 16, an overlying oxide layer 18 and a Si₃N₄ capping layer 20. Unlike the gate structure 10 of the prior art device 5 illustrated in FIG. 1, the cross sectional length of the gate structure 110 may be substantially reduced. For example, the cross sectional length of the gate structure 110 can be substantially reduced to approximately 0.20 microns. An advantage of the present invention is that the length of the gate structure 110 is reduced in comparison to the prior art due to the unique fabrication processing of the present invention (described below).

Referring now to FIG. 4, diffusion regions 130 a, 132 a are formed in the substrate 8 adjacent the sidewalls of the gate structure 110 and extend laterally away from the gate structure 110. It should be noted that a portion of the diffusion regions 130 a, 132 a diffuise beneath the gate structure 110. To create the diffusion regions 130 a, 132 a, the substrate 8 undergoes a first blanket implant step. It is desirable that an n-type be used, which makes the device 105 an NMOS device. It is desirable that the n-type dopant be phosphorous. However, it should be noted that other dopants can be used if so desired. For example, other n-type dopants such as arsenic or antimony could be used. If it were desirable for the device 105 to be a PMOS device, a p-type dopant such as boron, boron bifluoride (BF₂) or borane (B₂H₁₀) could be used. This first blanket phosphorous implant may be performed, for example, at an energy level of approximately 15 Kev with a dose of approximately 2×10¹² ions/cm². It should be appreciated that any other suitable dose and energy level can be used for this step. One exemplary range for the first blanket phosphorous implant may include an energy level between approximately 5 Kev to 45 Kev with a dose of approximately 1×10¹² ions/cm² to slightly less than 7×10¹² ions/cm².

It must be noted that this blanket phosphorous implant step is performed prior to a subsequent re-ox step since the energy level and dose is substantially lower than the dose used in the prior art (i.e., energy level ranging from 30 Kev to 60 Kev with a dose ranging from 7×10¹² ions/cm² to 1.5×10³ ions/cm² to provide an average dopant concentration for the diffusion regions 30, 32 ranging from 1×10¹⁷ ions/cm³ to 1×10¹⁹ ions/cm³). Thus, the first blanket phosphorous implant step can be performed prior to the re-ox step without having the phosphorous diffuse too far underneath the gate structure 110 and without causing subsequent transistor leakage problems.

Referring now to FIG. 5, a re-ox step is performed forming oxidized sidewalls 22, 24 on the gate structure 110 and oxide regions 26, 28 on the substrate 8. It should be appreciated that any conventional re-ox process can be performed at this point, such as a thermal re-ox process or a source/drain thermal re-ox process. Referring to FIG. 6, diffusion regions 130 b, 132 b are formed in the substrate 8 at the same location as diffusion regions 130 a, 132 b. To create the second diffusion regions 130 b, 132 b, the substrate 8 undergoes a second blanket implant step. As with the first blanket implant step, it is desirable that the dopant used is phosphorous. However, it should be noted that other dopants can be used if so desired, particularly if a different conductivity type of the device 105 is desired. This second blanket phosphorous implant may be performed at an energy level of approximately 20 Kev with a dose of approximately 4×10¹² ions/cm². It should be appreciated that any other suitable dose and energy level can be used for this step. One exemplary range for the second blanket phosphorous implant may include an energy level between approximately 5 Kev to 60 Kev with a dose of approximately 1×10¹² ions/cm² to 1×10¹³ ions/cm².

The oxidized sidewalls 22, 24 on the gate structure 110 prevent the second implant from diff-using underneath the gate structure 110, which helps in the formation of the individual diffusion regions 130 a, 130 b, 132 a, 132 b. The two diffusion regions 130 a, 130 b combine to form one diffusion region 130. The resultant diffusion region 130 will have two different dopant concentrations, one from region 130 a and one from region 130 b. There will be a smooth transition between the dopant concentrations of the two regions 130 a, 130 b. Similarly, the two diffusion regions 132 a, 132 b combine to form one diffusion region 132. The resultant diffulsion region 132 will have two different dopant concentrations, one from region 132 a and one from region 132 b. There will be a smooth transition between the dopant concentrations of the two regions 132 a, 132 b. As will be discussed below, these uniquely formed diffusion regions 130, 132 allow the device 105 to have substantially better static refresh performance in comparison to the prior art device 5 (FIG. 1).

Referring to FIG. 7, oxide or nitride sidewall spacers 40, 42 may be formed on the sidewalls of the gate structure 110 (as described in the '449 patent or by any other known method). In addition, further processing may be performed to form a memory cell as described in the '449 patent. It can be seen that the device 105 has two diffusion regions 130, 132, each having a pair of diffusion regions 130 a, 130 b, 132 a, 132 b, respectively.

FIG. 8 illustrates an exemplary phosphorous concentration 150 of the second diffusion region 132 with respect to its length (illustrated by arrow X). It should be noted that the first diffusion region 130 would have a similar concentration, but in a direction opposite the direction indicated by arrow X. An exemplary phosphorous concentration 152 of the prior art device is also illustrated. From the curves 150, 152 it can be seen how the second diffusion region 132 has a more graded concentration of phosphorous than the prior art diffusion regions (e.g., region 32 in FIG. 1). By more graded, we mean that the net doping concentration versus distance changes gradually. By contrast, as shown by curve 152, the diffusion region 32 (FIG. 1) of the prior art device has an abrupt change in concentration of phosphorous versus distance. That is, the net doping concentration of the prior art curve 152 undergoes a steep change with respect to distance. With a graded dopant concentration of the diffusion regions, the resistance to current flow is less than the diffusion regions of the prior art. Although the invention is not to be bound to any specific theory, it is believed that the more graded concentration of the present invention improves the static refresh of the device 105 by improving the junction at the storage node of the DRAM memory cell.

Referring again to FIG. 7, it can be seen that the two diffusion regions 130, 132 slightly diffuse below the gate structure 110. That is, there is a first region 140 of the first diffusion region 130 that resides underneath a portion of the gate structure 110. Similarly, there is a second region 142 of the second diffusion region 132 that resides underneath a portion of the gate structure 110. These regions 140, 142, which can be referred to as “overlap” regions, make the device 105 more robust to reliability stressing. That is, the overlap regions 140, 142 are less likely to degrade when high voltage is applied to the device, such as the types of voltages applied during manufacturing stress testing. These regions 140, 142, which are not present in the prior art device 5 (FIG. 1), are formed by the first blanket phosphorous implant step (FIG. 4). That is, by having the first blanket phosphorous implant step (FIG. 4) prior to the re-ox step (FIG. 5) some dopant can diffuse underneath the gate structure 110 forming region 140, 142 and causing the device 105 to have the above-mentioned robustness. This is another benefit of the present invention.

A standard measure of refresh performance is known as a “time to un-repairable calculation.” The term “repair” is sometimes used to indicate that a memory cell or memory bit has been repaired by electrical replacement with a redundant element. The terms “un repaired” or “un-repairable” are often used to indicate that the number of failing bits exceeds the capability of repair by redundant elements. In the time to un-repairable test, data is written into the bits of memory cells in the DRAM array. Measurements are taken to determine when a predetermined number of bits have lost their charge and within what time. The time it takes for the bits to lose their charge is commonly referred to as the “time to un-repairable” (TTUR).

Referring now to FIGS. 1, 2 and 9. The inventors ran experiments to compare TTUR results using the prior art device 5 (FIG. 1) with the results using the device 105 (FIG. 2) constructed in accordance with the present invention. FIG. 9 illustrates results from TTUR tests based on finding 100 bits that have lost their charge. The y-axis indicates the probability that 100 bits have lost their charge. The x-axis indicates the time when the charge was lost (and when a refresh operation became necessary). The first set of data 160 illustrates the results using the device 105 of the present invention. The second set of data 162 illustrates the results using the device 5 of the prior art. From the data 160, 162, it can be seen that 100 bits lost their charge (with 50% probability, i.e., 0.5 on the y-axis) using the prior art device 5 at approximately 120 milliseconds, while 100 bits lost their charge using the device 105 at approximately 210 milliseconds. That is, there is almost a 90 millisecond improvement in the device 105 constructed in accordance with the present invention. It is believed that this improvement is due to the uniquely formed diffusion regions 130, 132 of the device 105.

Referring now to FIGS. 1, 2 and 10. FIG. 10 illustrates results from TTUR tests based on finding 200 bits that have lost their charge. The y-axis indicates the probability that 200 bits have lost their charge. The x-axis indicates the time when the charge was lost (and when a refresh operation became necessary). The first set of data 170 illustrates the results using the device 105 while the second set of data 172 illustrates the results using the device 5. From the data 170, 172, it can be seen that 200 bits lost their charge (with 50% probability, i.e., 0.5 on the y-axis) using the prior art device at approximately 240 milliseconds, while 200 bits lost their charge using the device 105 at approximately 310 milliseconds. That is, there is almost a 70 millisecond improvement.

FIG. 11 illustrates a block diagram of a processor based system 200 utilizing a DRAM memory circuit 208 constructed in accordance with the present invention. That is, the memory circuit 208 utilizes the MOSFET memory array device 105 (FIG. 2) constructed in accordance with the present invention (FIGS. 3 to 7). The processor-based system 200 may be a computer system, a process control system or any other system employing a processor and associated memory. The system 200 includes a central processing unit (CPU) 202, e.g., a microprocessor, that communicates with the DRAM memory circuit 208 and an I/O device 204 over a bus 220. It must be noted that the bus 220 may be a series of buses and bridges commonly used in a processor-based system, but for convenience purposes only, the bus 220 has been illustrated as a single bus. A second I/O device 206 is illustrated, but is not necessary to practice the invention. The processor-based system 200 also includes a read-only memory (ROM) circuit 210 and may include peripheral devices such as a floppy disk drive 212 and a compact disk (CD) ROM drive 214 that also communicates with the CPU 202 over the bus 220 as is well known in the art. It should be noted that the CPU 202 can be combined on a single chip with one or more DRAM memory circuits 208 and ROM circuits 210.

While the invention has been described in detail in connection with the preferred embodiments known at the time, it should be readily understood that the invention is not limited to such disclosed embodiments. Rather, the invention can be modified to incorporate any number of variations, alterations, substitutions or equivalent arrangements not heretofore described, but which are commensurate with the spirit and scope of the invention. Accordingly, the invention is not to be seen as limited by the foregoing description, but is only limited by the scope of the appended claims. 

1-39. (canceled)
 40. A method for forming a semiconductor device, said method comprising: forming a gate structure having sidewalls over a semiconductor substrate; performing a first blanket implant with a first dopant on said substrate to form a plurality of first diffusion regions adjacent to the sidewalls of said gate structure; performing a re-ox to oxidize at least a portion of sidewalls of said gate structure; and performing a second blanket implant with a second dopant on said substrate to form a plurality of second diffusion regions, each of said second diffusion regions being formed within a space previously occupied by a respective one of said plurality of first diffusion regions; wherein each of said first diffusion regions is associated with and located beneath a respective second diffusion region; each of said first diffusion regions includes a portion extending beneath said gate structure; and none of said plurality of second diffusion regions include any portion which extends beneath said gate structure.
 41. The method of claim 40, wherein said first dopant is a n-type dopant.
 42. The method of claim 41, wherein said first dopant is chosen from a group consisting of phosphorous, arsenic, and antimony.
 43. The method of claim 40, wherein said first dopant is a p-type dopant.
 44. The method of claim 43, wherein said first dopant is chosen from a group consisting of boron, boron bifloride, and borane.
 45. The method of claim 40, wherein said first blanket implant is performed using an energy level ranging between 5 KeV to 45 KeV.
 46. The method of claim 45, wherein said first blanket implant is performed using an energy level of 15 KeV.
 47. The method of claim 40, wherein said first blanket implant is performed using an dosage ranging between 1×10¹² ions/cm² to 7×10¹² ions/cm².
 48. The method of claim 47, wherein said first blanket implant is performed using a dosage of 2×10¹² ions/cm².
 49. The method of claim 40, wherein said second dopant is the same as said first dopant.
 50. The method of claim 40, wherein said second dopant is different from said first.
 51. The method of claim 50, wherein said second dopant is of a different conductivity type as said first dopant.
 52. The method of claim 40, wherein said second blanket implant is performed using an energy level ranging from 5 KeV to 60 KeV.
 53. The method of claim 52, wherein said second blanket implant is performed using an energy level of 20 KeV.
 54. The method of claim 40, wherein said second blanket implant is performed using a dosage ranging from 1×10¹² ions/cm² to 10×10¹² ions/cm².
 55. The method of claim 54, wherein said second blanket implant is performed using a dosage of 4×10¹² ions/cm².
 56. A method of forming a semiconductor device, comprising: providing a gate structure disposed over a surface of said semiconductor substrate; performing a first blanket implant into the substrate to form a plurality of diffusion regions underneath the surface of the substrate adjacent to the gate structure, with a portion of each diffusion regions extending underneath a portion of said gate structure, thereby forming respective first and second overlap regions; performing a re-ox step to form oxidized sidewalls on the gate structure and oxide regions on the substrate; and performing a second blanket implant through the oxide regions and into the substrate at locations of the first and second diffusion regions to add additional dopant to the first and second diffusion regions, wherein the oxidized sidewalls on the gate structure prevents the additional dopant from diffusing underneath the gate structure, thereby forming respective diffusion regions on opposite sides of the gate structure each having a graded dopant concentration.
 57. The method of claim 56, wherein said first dopant is chosen from a group consisting of: phosphorous, arsenic, and antimony.
 58. The method of claim 56, wherein said second dopant is chosen from a group consisting of: phosphorous, arsenic, and antimony.
 59. The method of claim 56, wherein said first dopant is chosen from a group consisting of: boron, boron bifloride, and borane.
 60. The method of claim 56, wherein said second dopant is chosen from a group consisting of: boron, boron bifloride, and borane. 